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2SD2118(NPN)
TO-251/TO-252-2L Transistor

TO-251

1.BASE


2.COLLECTOR


3.EMITTER

1 2 3

Features
Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
Excellent DC current gain characteristics.

MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L

Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50