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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR505T
NPN 9 GHz wideband transistor
Product specification 2000 May 17
Supersedes data of 2000 Mar 14
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
FEATURES DESCRIPTION
Low current consumption NPN transistor in a plastic SOT416
High power gain (SC-75) package. 3
lfpage
Low noise figure
High transition frequency PINNING
Gold metallization ensures PIN DESCRIPTION 1 2
excellent reliability 1 base Top view MBK090
SOT416 (SC-75) package. 2 emitter
3 collector
APPLICATIONS Marking code: N0.
Low power amplifiers, oscillators and Fig.1 SOT416.
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
IC DC collector current 18 mA
Ptot total power dissipation Ts 75 C; note 1 150 mW
hFE DC current gain IC = 5 mA; VCE = 6 V; Tj = 25 C 60 120 250
fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; 17 dB
Tamb = 25 C
F noise figure IC = 1.25 mA; VCE = 6 V; 1.2 1.7 dB
f = 900 MHz; Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCE collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 18 mA
Ptot total power dissipation Ts 75 C; note 1 150 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 May 17 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 500 K/W
MGU068
200
Ptot
(mW)
150
100
50
0
0 50 100 150 200
Ts (