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MBT3946DW
Dual General Purpose Transistor 3 2 1
6 5
4
NPN+PNP Silicon
1
2
3
4 5 6 SOT-363(SC-88)
NPN+PNP
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc
(NPN) 40
(PNP) -40
Collector-Base Voltage VCBO Vdc
(NPN) 60
(PNP) -40
Emitter-Base VOltage VEBO Vdc
(NPN) 6.0
(PNP) -5.0
Collector Current-Continuous IC mAdc
(NPN) 200
(PNP) -200
Thermal Characteristics
Characteristics Symbol Max Unit
Total Package Dissipation (1)
TA=25 C PD 150 mW
Thermal Resistance, Junction to Ambient R q JA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MBT3946DW=46
WEITRON
http://www.weitron.com.tw
MBT3946DW
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) V(BR)CEO
40 - Vdc
(IC=1.0mAdc.IB=0) (NPN)
-40 -
(IC=-1.0mAdc.IB=0) (PNP)
Collector-Base Breakdown Voltage V(BR)CBO Vdc
(IC=10