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SEMICONDUCTOR KF12N68F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A C
This planar stripe MOSFET has better characteristics, such as fast
F
switching time, low on resistance, low gate charge and excellent
O
avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS
B
A _
10.16 + 0.2
correction and switching mode power supplies.
G
B _
15.87 + 0.2
C _
2.54 + 0.2
_
FEATURES D 0.8 + 0.1
E _
3.18 + 0.1
VDSS=680V, ID=12A
K
F _
3.3 + 0.1
Drain-Source ON Resistance : G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
RDS(ON)(Max)=0.71 @VGS=10V
J
J _
13.0 + 0.5
Qg(typ.)= 30nC K _
3.23 + 0.1
D
L 1.47 MAX
M 1.47 MAX
N N H
MAXIMUM RATING (Tc=25 ) N _
2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
1. GATE
CHARACTERISTIC SYMBOL RATING UNIT 2. DRAIN R _
2.76 + 0.2
Q
1 2 3
3. SOURCE
Drain-Source Voltage VDSS 680 V
Gate-Source Voltage VGSS 30 V
TO-220IS (1)
@TC=25 12*
ID
Drain Current @TC=100 7.5* A
Pulsed (Note1) IDP 30*
Single Pulsed Avalanche Energy EAS 440 mJ
(Note 2)
Repetitive Avalanche Energy EAR 6.3 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 50 W
PD
Dissipation Derate above 25 0.4 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.5 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2012. 12. 21 Revision No : 0 1/6
KF12N68F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 680 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=680V, VGS=0V - - 10 uA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=6A - 0.58 0.71
Dynamic
Total Gate Charge Qg - 30 -
VDS=520V, ID=12A
Gate-Source Charge Qgs - 7.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 11 -
Turn-on Delay time td(on) - 35 -
VDD=325V
Turn-on Rise time tr - 40 -
ID=12A ns
Turn-off Delay time td(off) - 90 -
RG=25 (Note4,5)
Turn-off Fall time tf - 45 -
Input Capacitance Ciss - 1700 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 175 - pF
Reverse Transfer Capacitance Crss - 11 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 12
VGS Pulsed Source Current ISP - - 48
Diode Forward Voltage VSD IS=12A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=12A, VGS=0V, - 480 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 6.1 - uC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =5.7mH, IS=12A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 12A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF12N68
F 813 2
1 PRODUCT NAME
2 LOT NO
2012. 12 .21 Revision No : 0 2/6
KF12N68F
Fig1. ID - VDS Fig2. ID - VGS
100
VDS=20V
VGS=10V
1
10
Drain Current ID (A)
Drain Current ID (A)
VGS=6V
10
VGS=5V
0
100 C 25 C
10
1
-1
0.1 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 1.8
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
1.5
1.1
1.2
VGS=5V VGS=6V
1.0 0.9
VGS=10V
0.6
0.9
0.3
0.8 0.0
-100 -50 0 50 100 150 0 5 10 15 20
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
2
10 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 6A
2.5
Normalized On Resistance
100 C
1 25 C
10 2.0
1.5
0 1.0
10
0.5
-1 0.0
10
0 0.5 1.0 1.5 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2012. 12 .21 Revision No : 0 3/6
KF12N68F
Fig 7. C - VDS Fig8. Qg- VGS
104 12
ID=12A
Gate - Source Voltage VGS (V)
10
103 Ciss
Capacitance (pF)
8
VDS = 520V
102 Coss 6
4
101
Crss 2
100 0
0 10 20 30 40 0 5 10 15 20 25 30 35 40
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
102
100