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CEH3456
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 5.5A, RDS(ON) = 42m @VGS = 10V.
RDS(ON) = 59m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D(1,2,5,6,)
Lead free product is acquired.
TSOP-6 package.
4
5
6 G(3)
3
2
1
TSOP-6 S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS