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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BFQ67
NPN 8 GHz wideband transistor
Product specification 1998 Aug 27
Supersedes data of September 1995
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
FEATURES DESCRIPTION
High power gain Silicon NPN wideband transistor in a
plastic SOT23 package. alfpage 3
Low noise figure
High transition frequency
Gold metallization ensures PINNING
excellent reliability. PIN DESCRIPTION 1 2
1 base Top view MSB003
APPLICATIONS
2 emitter
Satellite TV tuners and RF portable 3 collector
communications equipment up to Marking code: V2p.
2 GHz.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
IC collector current (DC) 50 mA
Ptot total power dissipation Ts 97 C; note 1 300 mW
hFE DC current gain IC = 15 mA; VCE = 5 V 60 100
fT transition frequency IC = 15 mA; VCE = 8 V 8 GHz
GUM maximum unilateral IC = 15 mA; VCE = 8 V; f = 1 GHz 14 dB
power gain
F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz 1.3 dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC) 50 mA
Ptot total power dissipation Ts 97 C; note 1 300 mW
Tstg storage temperature range 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1998 Aug 27 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 15 mA; VCE = 5 V 60 100
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 0.7 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1.3 pF
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 pF
fT transition frequency IC = 15 mA; VCE = 8 V 8 GHz
GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; 14 dB
(note 1) Tamb = 25 C; f = 1 GHz
IC = 15 mA; VCE = 8 V; f = 2 GHz 8 dB
F noise figure s = opt; IC = 5 mA; VCE = 8 V; 1.3 dB
Tamb = 25 C; f = 1 GHz
s = opt; IC = 15 mA; VCE = 8 V; 1.7 dB
Tamb = 25 C; f = 1 GHz
s = opt; IC = 5 mA; VCE = 8 V; 2.2 dB
Tamb = 25 C; f = 2 GHz
IC = 5 mA; VCE = 8 V; 2.5 dB
Tamb = 25 C; f = 2 GHz; Zs = 60
s = opt; IC = 15 mA; VCE = 8 V; 2.7 dB
Tamb = 25 C; f = 2 GHz
IC = 15 mA; VCE = 8 V; 3 dB
Tamb = 25 C; f = 2 GHz; Zs = 60
Note 2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ---------------------------------------------------------
-dB .
2 2
1