bfq17_cnv_2.pdf part of Philips bfq17 cnv 2 bfq17_cnv_2.pdf, . Electronic Components Datasheets Active components Transistors Philips bfq17_cnv

Text preview for : bfq17_cnv_2.pdf part of Philips bfq17 cnv 2 . Electronic Components Datasheets Active components Transistors Philips bfq17_cnv_2.pdf

Back to : bfq17_cnv_2.pdf | Home

DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ17
NPN 1 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

DESCRIPTION PINNING
NPN transistor in a SOT89 plastic PIN DESCRIPTION
envelope intended for application in
Code: FA
thick and thin-film circuits. The
1 emitter page
transistor has extremely good
intermodulation properties and a high 2 collector
power gain. 3 base

1 2 3

Bottom view MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 25 V
ICM peak collector current - 300 mA
Ptot total power dissipation up to Ts = 145