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SEMICONDUCTOR KTA1703
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION. A
DC-DC CONVERTER. B D
LOW POWER SWITCHING REGULATOR. C
E
F
FEATURES
High Breakdown Voltage. G
: VCEO=-400V
H
Low Collector Saturation Voltage DIM MILLIMETERS
J
: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA) A 8.3 MAX
K L B 5.8
High Speed Switching. C 0.7
D _
3.2 + 0.1
E 3.5
F _
11.0 + 0.3
G 2.9 MAX
M
H 1.0 MAX
J 1.9 MAX
MAXIMUM RATING (Ta=25 ) N
O
P
K _
0.75 + 0.15
1 2 3 L _
15.50 + 0.5
CHARACTERISTIC SYMBOL RATING UNIT M _
2.3 + 0.1
N _
0.65 + 0.15
Collector-Base Voltage VCBO -400 V 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector-Emitter Voltage VCEO -400 V 3. BASE
Emitter-Base Voltage VEBO -7 V
DC IC -0.5 TO-126
Collector Current A
Pulse ICP -1
Base Current IB -0.25 A
Collector Power Ta=25 1.5W
PC W
Dissipation Tc=25 10W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Base Voltage V(BR)CBO IC=-100 A, IE=0 -400 - -
V
Collector Emitter Voltage V(BR)CEO IC=-1mA, IB=0 -400 - -
Collector Cutoff Current ICBO VCB=-400V, IE=0 - - -10
A
Emitter Cutoff Current IEBO VEB=-5V, IC=0 - - -10
DC Current Gain hFE (Note) VCE=-5V, IC=-100mA 60 - 200 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -1
V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.2
Turn On Time tON IC=-100mA, RL=1.5k - - 1
Switching Time Storage Time tstg IB1=-10mA, IB2=20mA - - 4 S
Fall Time tf VCC=-150V - - 1
Note : hFE Classification O:60 120, Y:100 200
2003. 7. 24 Revision No : 6 1/2
KTA1703
I C - VCE h FE - I C
-0.5 1k
COMMON EMITTER
COLLECTOR CURRENT I C (A)
0mA Ta=25 C
I B=-20 -180mA 300
DC CURRENT GAIN h FE
-0.4 VCE =-5V
-160mA
-140mA 100
-0.3
-120mA
-100mA 30
-0.2 -80mA
-60mA 10
-0.1 -40mA
-20mA 3
0 1
0 -2 -4 -6 -8 -10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
V BE(sat) , VCE(sat) - I C REVERSE BIAS SAFE OPERATING AREA
-10 -250
I C /I B =10
COLLECTOR CURRENT I C (mA)
SATURATION VOLTAGE
-3
VBE(sat) , V CE(sat) (V)
-200
-1 VBE(sat)
VCEO(SUS) , V CEX(SUS)
-150
-0.3
VCE(sat) -100
-0.1
-0.03 -50
-0.01 0
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -1k 0 -100 -200 -300 -400 -500
COLLECTOR CURRENT I C (mA) COLLECTOR EMITTER VOLTAGE VCE (V)
Pc - Ta SAFE OPERATING AREA
12 -10
COLLECTOR POWER DISSIPATION
Ta=Tc
COLLECTOR CURRENT I C (A)
INFINITE HEAT SINK -3
10
I C (PULSE) MAX.* 10