Text preview for : irlz14a.pdf part of Samsung irlz14a . Electronic Components Datasheets Active components Transistors Samsung irlz14a.pdf



Back to : irlz14a.pdf | Home

Advanced Power MOSFET IRLZ14A
FEATURES
BVDSS = 60 V
Logic-Level Gate Drive
Avalanche Rugged Technology
RDS(on) = 0.155
Rugged Gate Oxide Technology ID = 10 A
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
TO-220
Lower Leakage Current : 10