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SEMICONDUCTOR KU086N10P/F
TECHNICAL DATA N-ch Trench MOS FET
General Description
KU086N10P
This Trench MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for DC/DC Converter,
E G DIM MILLIMETERS
Synchronous Rectification and a load switch in battery powered A _
9.9 + 0.2
B
B 15.95 MAX
applications Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
FEATURES K _
P F 2.8 + 0.1
VDSS= 100V, ID= 95A M G 3.7
L
H 0.5+0.1/-0.05
Drain-Source ON Resistance : J I 1.5
RDS(ON)=8.6m (Max.) @VGS = 10V D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
KU086N10P KU086N10F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 95 50
ID
Drain Current @TC=100 60 32.5 A
Pulsed (Note1) IDP 400* KU086N10F
Single Pulsed Avalanche Energy EAS
A C
570 mJ
(Note 2) F
Repetitive Avalanche Energy
O
EAR 7.1 mJ
(Note 1) E DIM MILLIMETERS
B
Peak Diode Recovery dv/dt A _
10.16 + 0.2
dv/dt 4.5 V/ns
G
(Note 3) B _
15.87 + 0.2
C _
2.54 + 0.2
Drain Power Tc=25 167 50 W D _
0.8 + 0.1
PD _
Dissipation Derate above 25 1.33 0.4 W/ E 3.18 + 0.1
K
F _
3.3 + 0.1
Maximum Junction Temperature Tj 150 G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
J
Storage Temperature Range Tstg -55 ~ 150 J _
13.0 + 0.5
K _
3.23 + 0.1
D
Thermal Characteristics L 1.47 MAX
M 1.47 MAX
RthJC N N
Thermal Resistance, Junction-to-Case 0.75 2.5 /W H
N _
2.54 + 0.2
O _
6.68 + 0.2
Thermal Resistance,
RthJA 62.5 /W Q _
4.7 + 0.2
Junction-to-Ambient R _
2.76 + 0.2
1 2 3
Q
* : Drain current limited by maximum junction temperature. 1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS (1)
D
G
S
2011. 1. 20 Revision No : 0 1/7
KU086N10P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.09 - V/
Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=47.5A - 7.3 8.6 m
Dynamic
Total Gate Charge Qg - 200 -
VDS=80V, ID=80A
Gate-Source Charge Qgs - 35 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 60 -
Turn-on Delay time td(on) - 120 -
VDD=50V
Turn-on Rise time tr - 230 -
ID=80A ns
Turn-off Delay time td(off) - 520 -
RG=25 (Note4,5)
Turn-off Fall time tf - 200 -
Input Capacitance Ciss - 8800 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 630 - pF
Reverse Transfer Capacitance Crss - 340 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 95
VGS Pulsed Source Current ISP - - 380
Diode Forward Voltage VSD IS=95A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=80A, VGS=0V, - 65 - ns
Reverse Recovery Charge Qrr dIs/dt=300A/ s - 0.32 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =70 H, IS=80A, VDD=80V, RG=25 , Starting Tj=25 .
Note 3) IS 80A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KU 1
KU
086N10P
086N10P 001 2
001 2
1 PRODUCT NAME
2 LOT NO
2011. 1. 20 Revision No : 0 2/7
KU086N10P/F
Fig1. ID - VDS Fig2. ID - VGS
103 103
VDS = 3V
Drain Current ID (A)
Drain Current ID (A)
VGS=5V
VGS=7V, 10V
102 VGS=4.5V 102
100 C
25 C
101 101
100 100
10-2 10-1 100 101 102 2 3 4 5 6 7 8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.3 3.0
VGS = 0V VGS=10V
On - Resistance RDS(ON) (m)
IDS = 5mA ID=47.5A
1.2 2.5
2.0
1.1
1.5
1.0
1.0
0.9
0.5
0.8 0
-50 0 50 100 150 200 -50 0 50 100 150 200
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD - Fig6. IS - VSD -
103 103
Reverse Drain Current IS (A)
Reverse Drain Current IS (A)
VGS=7V, 10V
102 102
100 C 25 C VGS=4V
101 101 VGS=3V
VGS=2V
VGS=0V
100 100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V) Source - Drain Voltage VSD (V)
2011. 1. 20 Revision No : 0 3/7
KU086N10P/F
Fig7. RDS(ON) - ID Fig8. ID- Tj
20 120
On - Resistance RDS(ON) (m)
100
Drain Current ID (A)
15 KU086N10P
80
VGS=4.5V
VGS=5V
10 60
KU086N10F
VGS=10V 40
5
20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200
Drain Current ID (A) Junction Temperature Tj ( )
Fig 9. C - VDS Fig10. Qg- VGS
105 12
VDS=80V
Gate - Source Voltage VGS (V)
10
Capacitance (pF)
Ciss
104 8
6
103 Coss 4
2
Crss
Frequency=1MHz, VGS=0V
102 0
0 10 20 30 40 0 40 80 120 150 200 240
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig11. Safe Operation Area Fig12. Safe Operation Area
(KU086N10P) (KU086N10F)
103 103
Drain Current ID (A)
Drain Current ID (A)
10us 10us
102 102
100us 100us
1ms 1ms
101 101
Operation in this Operation in this
area is limited by RDS(ON) 10ms area is limited by RDS(ON) 10ms
DC DC
100 100
Tc= 25 C Tc= 25 C
Single nonrepetitive pulse Single nonrepetitive pulse
-1 -1
10 10
10-1 100 101 102 10-1 100 101 102
Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)
2011. 1. 20 Revision No : 0 4/7
KU086N10P/F
Fig13. Transient Thermal Response Curve
(KU086N10P)
100
Transient Thermal Resistance
Duty=0.5
0.2
0.1 PDM
10-1
t1
0.05
0.02
t2
0.01
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5 10-4 10-3 10-2 10-1 100 101
TIME (sec)
Fig14. Transient Thermal Response Curve
(KU086N10F)
101
Transient Thermal Resistance
Duty=0.5
100
0.2
0.1 PDM
0.05
t1
10-1 0.02
0.01
t2
Single Pulse - Duty Factor, D= t1/t2
10-2
10-5 10-4 10-3 10-2 10-1 100 101
TIME (sec)
2011. 1. 20 Revision No : 0 5/7
KU086N10P/F
Fig15. Gate Charge
VGS
10 V
Fast
Recovery
ID Diode
0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS
Fig16. Single Pulsed Avalanche Energy
1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS
L
IAS
0.8 VDSS
25
VDS ID(t)
VGS VDD VDS(t)
10 V
Time
tp
Fig17. Resistive Load Switching
VDS
90%
RL
0.5 VDSS
VGS 10%
td(off)
25 td(on) tr
VDS tf
ton toff
VGS
10V
2011. 1. 20 Revision No : 0 6/7
KU086N10P/F
Fig18. Source - Drain Diode Reverse Recovery and dv /dt
DUT Body Diode Forword Current
VDS
ISD
IF (DUT) di/dt
IRM
IS
Body Diode Reverse Current
0.8 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD
10V VGS
Body Diode Forword Voltage drop
2011. 1. 20 Revision No : 0 7/7