mjd112.pdf part of LGE mjd112 mjd112.pdf, . Electronic Components Datasheets Active components Transistors LGE mjd112.pdf text manual preview

Text preview for : mjd112.pdf part of LGE mjd112 . Electronic Components Datasheets Active components Transistors LGE mjd112.pdf

Back to : mjd112.pdf | Home

MJD112(NPN)
TO-251/TO-525-2L Transistor

TO-251
1. BASE

2. COLLECTOR

3. EMITTER

1 2 3

Features
Complementary darlington power transistors
dpak for surface mount applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 1 W
RJC Thermal resistance, junction to case 6.25 /W
RJA Thermal resistance, junction to Ambient 71.4 /W Dimensions in inches and (millimeters)

TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V

Collector-emitter breakdown voltage V(BR)CEO IC =30mA,IB=0 100 V

Emitter-base breakdown voltage V(BR)EBO IE=5mA,IC=0 5 V

Collector cut-off current ICBO VCB=100V,IE=0 20