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S8050
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Complimentary to S8550
Collector Current: IC=0.5A
MARKING: J3Y
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut-off current ICEO VCB=20V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
HFE(1) VCE=1V, IC= 50mA 120 350
DC current gain
HFE(2) VCE=1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
VCE=6V, IC= 20mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350
S8050
SOT-23 Transistor(NPN)
Typical Characteristics