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CEM6601
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -4A, RDS(ON) = 86m @VGS = -10V.
RDS(ON) = 125m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D D D D
Lead free product is acquired.
8 7 6 5
Surface mount Package.

SO-8
1 2 3 4
1 S S S G

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS