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KTA1505
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Excellent hFE linearity:
hFE(2)=25(Min).at VCE=-6V,IC=-400mA
Complementary to KTC3876
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 150 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
hFE(1) VCE=-1V,IC=-100mA 70 400
DC current gain
hFE(2) VCE=-6V,IC=-400mA 25
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.25 V
Base-emitter voltage VBE VCE=-1V,IC=-100mA -1 V
Transition frequency fT VCE=-6V,IC=-20mA 200 MHz
Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 13 pF
CLASSIFICATION OF hFE(1)
Rank O Y GR
Range 70-140 120-240 200-400
Marking AZO AZY AZG
KTA1505
SOT-23 Transistor(PNP)
Typical Characteristics
