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STL8NH3LL
N-channel 30 V, 0.012 8 A - PowerFLATTM (3.3x3.3)
,
ultra low gate charge STripFETTM Power MOSFET
Features
Type VDSS RDS(on) ID
STL8NH3LL 30V <0.015 8A (1)
Improved die-to-footprint ratio
Very low profile package (1mm max)
Very low thermal resistance PowerFLATTM(3.3x3.3)
Very low gate charge
Low threshold device
(Chip Scale Package)
t( s)
In compliance with the 2002/95/EC European
directive
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Description P ro
This application specific Power MOSFET is the
latest generation of STMicroelectronics unique
Figure 1.
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Internal schematic diagram
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STripFETTM technology. The resulting transistor is
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optimized for low on-resistance and minimal gate
charge. The chip-scaled PowerFLATTM package
allows a significant board space saving, still
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boosting the performance.
Applications
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Table 1. Device summary
O Order code
STL8NH3LL
Marking
8NH3L
Package
PowerFLATTM (3.3x3.3)
Packaging
Tape and reel
September 2009 Doc ID 10681 Rev 8 1/12
www.st.com 12
Contents STL8NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/12 Doc ID 10681 Rev 8
STL8NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage
