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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV10
VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification
VHF power transistor BLV10
DESCRIPTION It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
N-P-N silicon planar epitaxial
from the flange.
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to Th = 25