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BD235
BD237

Low voltage NPN power transistors

Features
Low saturation voltage
NPN transistors

Applications
Audio, power linear and switching applications 1
2
3

Description SOT-32
(TO-126)
The devices are manufactured in Planar
technology with "Base Island" layout. The Figure 1. Internal schematic diagram
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type is BD238.

Table 1. Device summary
Order codes Marking Package Packaging

BD235 BD235 SOT-32 Tube
BD237 BD237 SOT-32 Tube

June 2009 Doc ID 4189 Rev 3 1/9
www.st.com 9
Absolute maximum ratings BD235, BD237

1 Absolute maximum ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
BD235 BD237

VCBO Collector-base voltage (IE = 0) 60 100 V
VCER Collector-emitter voltage (RBE = 1 k) 60 100 V
VCEO Collector-emitter voltage (IB = 0) 60 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 2 A
ICM Collector peak current (tp < ms) 6 A
PTOT Total dissipation at Tcase = 25