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HN4A08J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

HN4A08J
Low Frequency Power Amplifer Applications
Unit: mm
Power Switching Application
High DC Current Gain : hFE = 100~320
Low Saturation Voltage : VCE(sat)= -0.4V (Max.)
: (IC = -500mA , IB = -20mA)

Absolute Maximum Ratings (Ta = 25