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SEMICONDUCTOR KTA1001
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
CAMERA STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
A
C
FEATURES
H
hFE=100 320 (VCE=-2V, IC=-0.5A). G
hFE=70(Min.) (VCE=-2V, IC=-3A).
B
J
E
Low Collector Saturation Voltage.
DIM MILLIMETERS
: VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA). A 4.70 MAX
D D B _
2.50 + 0.20
High Power Dissipation.
K C 1.70 MAX
: PC=1W(Tc=25 ), PC=0.5W(Ta=25 ). F F
D 0.45+0.15/-0.10
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
1 2 3 H 1.75 MAX
J 0.75 MIN
K 0.5+0.10/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT 1. BASE
2. COLLECTOR (HEAT SINK)
Collector-Base Voltage VCBO -35 V 3. EMITTER
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -8 V
DC IC -3 A SOT-89
Collector Current
Pulse (Note1) ICP -5 A
Base Current IB -0.5 A
Collector Power Ta=25 0.5
PC W
Dissipation Tc=25 * 1 Marking
Junction Temperature Tj 150 h FE Rank Lot No.
Storage Temperature Range Tstg -55 150
Note1 : Pulse Test : Pulse width=10ms(Max.)
Type Name
K
Duty cycle=30%(Max.)
*Pc : KTA1001 mounted on ceramic substrate(250mm2x0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V
hFE(1) (Note2) VCE=-2V, IC=-0.5A 100 - 320
DC Current Gain
hFE(2) VCE=-2V, IC=-3A 70 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-75mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-3A - - -1.5 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 62 - pF
Note2 : hFE(1) Classification 0:100 200, Y:160 320
1994. 3. 21 Revision No : 0 1/2
KTA1001
I C - V CE VCE (sat) - I C
COLLECTOR-EMITTER SATURATION
-4 -1
COMMON EMITTER COMMON EITTER
COLLECTOR CURRENT I C (A)
-100mA
A
-0.5 I C /I B =40
-50m
VOLTAGE VCE (sat) (V)
-20mA Ta=25 C
-3 -0.3
-10mA
-2 -0.1
C
00
-5mA
-0.05 =1
Ta C
-3mA 5
=2
-1 -0.03 Ta C
-2mA 5
=-2
Ta
I B =-1mA
0 -0.01
0 -0.8 -1.6 -2.4 -3.2 -4.0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
h FE - I C SAFE OPERATING AREA
2k -10
COMMON EMITTER I C MAX. (PULSED) *
COLLECTOR CURRENT I C (A)
VCE =-1V -5 10
DC CURRENT GAIN h FE
1k I C MAX. (DC) ms
Ta=100 C
-3 100
ms *
500 Ta=25 C DC
OP *
-1 ER
300 AT
Ta=-25 C IO
-0.5 N
-0.3
* SINGLE
100 NONREPETITIVE
PULSE Ta=25 C
-0.1 CURVES MUST BE DERATED
50 LINEARLY WITH INCREASE
-0.05 IN TEMPERATURE
30 -0.03
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.1 -0.3 -1 -3 -10 -30
COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V)
PC - T a
COLLECTOR POWER DISSPATION P C (W)
1.2
1 MOUNTED ON CERAMIC
1
SUBSTRATE
1.0 (250mm 2 x0.8t)
2 Ta=25 C
0.8
0.6 2
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
1994. 3. 21 Revision No : 0 2/2
