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CEH2288
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 5.2A , RDS(ON) = 26m @VGS = 4.5V.
RDS(ON) = 35m @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.

Lead free product is acquired.
D1(2) D2(5)
TSOP-6 package.

4
5
6 G1(6) G2(4)

3
2
1 S1(1) S2(3)

TSOP-6



ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS