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CED07N65A/CEU07N65A
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

650V, 6A, RDS(ON) = 1.45 @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired. D
TO-251 & TO-252 package.

D
G
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK)
S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS