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STN3PF06
P-channel 60 V - 0.20 - 2.5 A - SOT-223
STripFETTM II Power MOSFET
Features
RDS(on)
Type VDSS ID
max
2
STN3PF06 60 V < 0.22 2.5 A
Extremely dv/dt capability 3
2
100% avalanche tested 1
Application oriented characterization SOT-223
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1. Device summary
Order code Marking Package Packaging
STN3PF06 N3PF06 SOT-223 Tape and reel
March 2008 Rev 4 1/12
www.st.com 12
Contents STN3PF06
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits ............................................... 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN3PF06 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VGS Gate-source voltage
