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High Voltage IGBT with Diode VCES = 1200 V
IXGQ 20N120B IC25 = 40 A
IXGQ 20N120BD1 VCE(sat) = 3.4 V
tfi(typ) = 160 ns

BD1

Symbol Test Conditions Maximum Ratings TO-3P (IXGQ)

VCES TJ = 25