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HN4C08J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN4C08J
Low Frequency Power Amplifer Applications Unit: mm

Power Switching Application

High DC Current Gain : hFE = 100~320
Low Saturation Voltage : VCE(sat)=0.4V (Max.)
: (IC = 500mA , IB = 20mA)

Absolute Maximum Ratings (Ta = 25