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SEMICONDUCTOR KRC681T~KRC686T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
E

B
FEATURES DIM MILLIMETERS
A _
2.9 + 0.2
1 5
High emitter-base voltage : VEBO=25V(Min) B 1.6+0.2/-0.1
_
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) C 0.70 + 0.05




G
2 _
D 0.4 + 0.1
Low on resistance : Ron=1 (Typ.) (IB=5mA)




F
A
E 2.8+0.2/-0.3
F _
1.9 + 0.2




G
3 4
With Built-in Bias Resistors. G 0.95




D
_
Simplify Circuit Design. H 0.16 + 0.05
I 0.00-0.10
Reduce a Quantity of Parts and Manufacturing Process. J 0.25+0.25/-0.15
K 0.60




C

L
L 0.55
I
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) J J
H


5 4
C
1. Q 1 IN (BASE)
2. Q 1, Q 2 COMMON (EMITTER)
R1
3. Q 2 IN (BASE)
B Q1 Q2 4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)




E 1 2 3
TSV




MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 25 V
Collector Current IC 300 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )



MARK SPEC
hFE classification
TYPE
B Marking
KRC681T MQB 5 4
h FE Rank Lot No.
KRC682T MRB
KRC683T MSB Type Name

KRC684T MTB
KRC685T MUB 1 2 3

KRC686T MVB




2008. 11. 20 Revision No : 4 1/2
KRC681T~KRC686T

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - - 0.1 V
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
KRC681T 1.54 2.2 2.86
KRC682T 3.29 4.7 6.11
KRC683T 3.92 5.6 7.28
Input Resistor R1 k
KRC684T 4.76 6.8 8.84
KRC685T 7 10 13
KRC686T 15.4 22 28.6
Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF
* Characteristic of Transistor Only.
Note) hFE Classification B:350 1200




2008. 11. 20 Revision No : 4 2/2