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Philips Semiconductors Product specification

TrenchMOSTM transistor PHT11N06LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
suitable for surface mounting. ID Drain current (DC) Tsp = 25