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PSMN015-100P/100B
N-channel TrenchMOSTM Standard level FET
Rev. 05 -- 14 January 2004 Product data
1. Product profile
1.1 Description
SiliconMAXTM products use the latest Philips TrenchMOSTM technology to achieve
the lowest possible on-state resistance in each package.
1.2 Features
s Low on-state resistance s Avalanche ruggedness rated.
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data
s VDS 100 V s ID 75 A
s Ptot 300 W s RDSon 15 m
2. Pinning information
Table 1: Pinning - SOT78, SOT404 simplified outlines and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb d
2 drain (d) [1]
3 source (s)
mb mounting base; g
connected to drain (d)
MBB076 s
2
1 3 MBK116
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors PSMN015-100P/100B
N-channel TrenchMOSTM Standard level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PSMN015-100P TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
PSMN015-100B D2-PAK Plastic single-ended surface mounted package; 3 leads (1 lead cropped) SOT404
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25