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STB100NF04L
N-CHANNEL 40V - 0.0036 - 100A D2PAK
STripFETTM II POWER MOSFET

TYPE VDSS RDS(on) ID

STB100NF04L 40 V <0.0042 100 A
s TYPICAL RDS(on) = 0.0036
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
3
1
DESCRIPTION
This Power MOSFET is the latest development of D2PAK
TO-263
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor (Suffix "T4")
shows extremely high packing density for low on- ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 40 V
VDGR Drain-gate Voltage (RGS = 20 k) 40 V
VGS Gate- source Voltage