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CEA6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.6A, RDS(ON) = 90m @VGS = 10V.
RDS(ON) = 110m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-89 package.
G
D
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS