Text preview for : cep75n06_ceb75n06.pdf part of CET cep75n06 ceb75n06 . Electronic Components Datasheets Active components Transistors CET cep75n06_ceb75n06.pdf



Back to : cep75n06_ceb75n06.pdf | Home

CEP75N06/CEB75N06
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 75A, RDS(ON) = 12m @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D
Lead free product is acquired.

TO-220 & TO-263 package.



D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S



ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS