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S8 550
S901 2
SOT-23
TRANSISTOR(PNP)
FEATURES
Complimentary to S8050
1. BASE
Collector current: IC=0.5A
2. EMITTER
3. COLLECTOR
MARKING : 2TY
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 A
hFE(1) VCE= -1V, IC= -50mA 120 400
DC current gain
hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
VCE= -6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
S901 2
S8 550
2
JinYu www.htsemi.com
semiconductor
Date:2011/05