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2SB985
TO-92MOD Transistor (PNP)
1. EMITTER TO-92MOD
1 5.800
2 6.200
3 2. COLLECTOR
8.400
8.800
3. BASE
Features 0.900
1.100
0.400
0.600
Power supplies, relay drivers, lamp drivers
13.800
Adoption of FBET,MBIT processes 14.200
Low saturation voltage
Large current capacity and wide ASO 1.500 TYP
2.900
3.100
0.000 1.600
0.380
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.400 4.700
0.500 5.100
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V 1.730
4.000 2.030
VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V
Collector cut-off current ICBO VCB=-40V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -1 A
hFE(1) VCE=-2V, IC=-100mA 100 560
DC current gain
hFE(2) VCE=-2V, IC=-3A 40
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-100mA -0.7 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB=-100mA -1.2 V
Transition frequency fT VCE=-10V, IC=-50mA 150 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 39 pF
CLASSIFICATION OF hFE(1)
Rank R S T U
Range 100-200 140-280 200-400 280-560
2SB985
TO-92MOD Transistor (PNP)
Typical Characteristics
2SB985
TO-92MOD Transistor (PNP)