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March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V
transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.055 @ VGS = 4.5 V.
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance, High density cell design for extremely low RDS(ON).
provide superior switching performance. These products are
well suited to low voltage, low current applications such as High power and current handling capability in a widely used
notebook computer power management, battery powered surface mount package.
circuits, and DC motor control.
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D D
G D S G S
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDT459N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous
