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CEP01N6G/CEB01N6G
CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP01N6G 600V 9.3 1A 10V
CEB01N6G 600V 9.3 1A 10V
CEF01N6G 600V 9.3 1A d 10V

Super high dense cell design for extremely low RDS(ON). D

High power and current handing capability.
Lead free product is acquired.

D G

G G
G D D
S S S
CEB SERIES CEP SERIES CEF SERIES S
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS