Text preview for : irlf120.pdf part of International Rectifier irlf120 . Electronic Components Datasheets Active components Transistors International Rectifier irlf120.pdf



Back to : irlf120.pdf | Home

PD - 90639A




REPETITIVE AVALANCHE AND dv/dt RATED IRLF120

HEXFET TRANSISTORS 100V, N-CHANNEL
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS RDS(on) ID
IRLF120 100V 0.35 5.3A

The Logic Level `L' series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established

characterstics of HEXFETs , they have the added ad- TO-39
vantage of providing low drive requirements to inter-
face power loads to logic level IC's and microprocessors.
Fields of applications include: high speed power appli- Features:
cations such as switching regulators, switching con- n Repetitive Avalanche Ratings
verters, motor drivers, solenoid and relay drivers and n Dynamic dv/dt Rating
drivers for high power bipolar switching transistors re- n Low Drive Requirements
quiring high speed and low gatedrive voltage. n Execellent Temperature Stability
The HEXFET technology is the key to International n Fast Switching Speeds
Rectifier's advanced line of logic level power MOSFET n Ease of Paralleling
transistors. The efficient geometry and unique process- n Hermetically Sealed
ing of the HEXFET achieve very low on-state resistance
n Light Weight
combined with high transconductance and great de-
vice ruggedness.
.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 5.0V, TC = 25