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STx25NM60ND
N-channel 600 V, 0.13 , 21 A FDmeshTM II Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
VDSS @
Type RDS(on) max ID
TJMAX 3
3
3 1
2
1 2
STB25NM60ND 21 A
D2PAK
1
TO-220
STI25NM60ND 21 A TO-220FP
STF25NM60ND 650 V 0.16 21 A(1)
STP25NM60ND 21 A
STW25NM60ND 21 A
1. Limited only by maximum temperature allowed 3
12 3
2
The worldwide best RDS(on)*area amongst the 1
I2PAK TO-247
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance Figure 1. Internal schematic diagram
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in ZVS
phase-shift converters.
Table 1. Device summary
Order codes Marking Package Packaging
STB25NM60ND 25NM60ND D