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FDMC2674 N-Channel UltraFET Trench MOSFET
January 2007
FDMC2674 tm
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366m
Features General Description
Max rDS(on) = 366m at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable
Typ Qg = 12.7nC at VGS = 10V benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
Low Miller charge these devices are ideal for high frequency DC to DC converters.
Low Qrr Body Diode
Application
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse) DC/DC converters and Off-Line UPS
RoHS Compliant Distributed Power Architectures
Bottom Top
8 D
7 D D 5 4 G
6 D
5
D D 6 3 S
D 7 2 S
1 G
2 D
3 S 8 1 S
4 S
S
Power 33
MOSFET Maximum Ratings TA = 25