. Electronic Components Datasheets 2sd1616 free download

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2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2SD16116 2SD1616A Unit Collector-Emitter Voltage VCEO 50 60 Vdc Collector-Base Voltage VCBO 60 120 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc Total Device Dissipation TA=25 C PD 0.75 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0) 2SD1616 V(BR)CEO 50 - Vdc 2SD1616A 60 Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0) 2SD1616 V(BR)CBO 60 - Vdc 2SD1616A 120 Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) V(BR)EBO 6.0 - Vdc Collector Cutoff Current (VCB=60 Vdc, IE=0) ICBO - 0.1 uAdc Emitter Cutoff Current (VEB= 6.0 Vdc, I C=0) IEBO - 0.1 uAdc WEITRON http://www.weitron.com.tw 2SD1616 2SD1616A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) hFE (1) 135 - 600 - DC Current Gain hFE (2) 81 - - -