. Electronic Components Datasheets bfs17w free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1 base VHF tuners. 2 emitter 3 collector DESCRIPTION 1 2 Silicon NPN transistor in a plastic Top view MBC870 SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. Marking code: E1 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage 25 V VCEO collector-emitter voltage 15 V IC DC collector current 50 mA Ptot total power dissipation up to Ts = 118 C; note 1 300 mW hFE DC current gain IC = 2 mA; VCE = 1 V 25 90 fT transition frequency IC = 25 mA; VCE = 5 V 1.6 GHz Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz 0.8 1.5 pF Cre feedback capacitance IC = 1 mA; VCE = 5 V; f = 1 MHz 0.75 pF Tj junction temperature 175 C Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage op