. Electronic Components Datasheets kml0d3p20v free download

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SEMICONDUCTOR KML0D3P20V TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 @ VGS=-4.5V : RDS(ON)=1.6 @ VGS=-2.5V : RDS(ON)=2.7 @ VGS=-1.8V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Marking Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 6 V DC @TA=25 -300 Drain Current DC @TA=85 ID* -210 Type Name LB mA Pulsed IDP -650 Source-Drain Diode Current IS 125 Drain Power Dissipation P D* 150 mW Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA* 446 /W Note 1) *Surface Mounted on FR4 Board, t 5sec PIN CONNECTION (TOP VIEW) D 3 3 2 1 G S 2 1 2012. 3. 5 Revision No : 0 1/4 KML0D3P20V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V Drain Cut-off Current IDSS VGS=0V, VDS=-16V - -0.3 -100 nA Gate Leakage Current IGSS VGS= 4.5V, VDS=0V - 1.0 2.0 A Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.45 - -1.0 VGS=-4.5V, ID=-300mA - 0.80 1.20