Philips pmbta45 free download

File name pmbta45.pdf

PMBTA45 500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor Rev. 02 -- 10 March 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 V - - 500 V voltage VCEO collector-emitter voltage open base - - 500 V IC collector current - - 0.15 A hFE DC current gain VCE = 10 V; IC = 30 mA 50 100 - NXP Semiconductors PMBTA45 500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2