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2SB1 07 3 TRANSISTOR FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -7 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-7V,IC=0 -0.1 A DC current gain hFE VCE=-2V,IC=-2A 120 315 Collector-emitter saturation voltage VCE(sat) IC=-3A,IB=-100mA -1 V Transition frequency fT VCE=-6V,IC=-50mA,f=200MHz 120 MHz Collector output capacitance Cob VCB=-20V,IE=0,f=1MHz 40 pF CLASSIFICATION OF hFE Rank Q R Range 120-205 180-315 Marking IQ IR 1 JinYu www.htsemi.com semiconductor Date:2011/05 2SB1 07 3 Typical Characteristics 2 JinYu www.htsemi.com semiconductor Date:2011/05