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STW14NM50 N-CHANNEL 550V @ Tjmax - 0.32 - 14A TO-247 MDmeshTM MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID (@Tjmax) STW14NM50 550 V < 0.35 14 A s TYPICAL RDS(on) = 0.32 s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE RATED s LOW INPUT CAPACITANCE AND GATE s) CHARGE t( s LOW GATE INPUT RESISTANCE uc s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS TO-247 d DESCRIPTION P ro te The MDmeshTM is a new revolutionary MOSFET Figure 2: Internal Schematic Diagram le technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizon- so tal layout. The resulting product has an Ob outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprierati strip tech- nique yields overall dynamic performance that is - s) significantly better than that of similar completi- tion's products. t( APPLICATIONS d uc The MDmeshTM family is very suitablr for increase ro the power density of high voltage converters allow- P ing system miniaturization and higher efficiencies. e let Table 2: Order Codes so SALES TYPE MARKING PACKAGE PACKAGING Ob STW14NM50 W14NM50 TO-247 TUBE Rev. 5 July 2004 1/9 STW14NM50 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VGS Gate- source Voltage