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2SC2551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 100 mA PC Collector power dissipation 400 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V Collector cut-off current ICBO VCB=300V, IE=0 0.1 A Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A hFE(1) VCE=10V, IC=20mA 30 150 DC current gain hFE(2) VCE=10V, IC=1mA 20 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 1.2 V Transition frequency fT VCE=10V, IC=20mA 80 MHz Collector output capacitance Cob VCB=20V,IE=0,f=1MHz 4 pF CLASSIFICATION OF hFE(1) Rank R O Range 30-90 50-150 2SC2551(NPN)