LGE 2sa608 free download

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2SA608(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V Emitter-Base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -1 A DC current gain hFE VCE=-6V, IC=-1mA 60 560 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V Transition frequency fT VCE=-6V, IC=-10mA 180 MHz Collector output capacitance Cob VCB=-6V, f=1MHz 7 pF CLASSIFICATION OF hFE Rank D E F G Range 60-120 100-200 160-320 280-560 2SA608(PNP)