ST 2stc4467 free download

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2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 Electrical ratings 2STC4467 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 120 V VCEO Collector-emitter voltage (IB = 0) 120 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 8 A ICM Collector peak current (tP < 5 ms) 16 A PTOT Total dissipation at Tc = 25