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STL24NM60N N-channel 600 V, 0.200 16 A PowerFLATTM (8x8) HV , MDmeshTM II Power MOSFET Preliminary data Features VDSS @ RDS(on) Type ID TJmax max STL24NM60N 650 V < 0.215 16 A (1) 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram This device is made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STL24NM60N 24NM60N PowerFLATTM (8x8) HV Tape and reel January 2011 Doc ID 18363 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice. Contents STL24NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 18363 Rev 1 STL24NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS