LGE a1015 to-92 free download

File name a1015_to-92.pdf

A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 A Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A DC current gain hFE VCE= -6V, IC= -2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -10mA -1.1 V VCE= -10 V, IC= -1mA Transition frequency fT 80 MHz f =30MHz Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 7 pF