Wietron 2n3906 free download

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2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2. BASE 2 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc - Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 Vdc Collector Cutoff Current (VCE= -40 Vdc, I B =0) ICE0 -0.1 uAdc - Collector Cutoff Current (VCB= -40 Vdc, IE=0) ICBO - -0.1 uAdc Emitter Cutoff Current (VEB= -5.0Vdc, I C =0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw 2N3906 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain hFE (1) 100 - 400 - (IC= -10 mAdc, VCE=-1.0 Vdc) DC Current Gain hFE (2) 60 - - - (IC= -50 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage - VCE(sat) - -0.3 Vdc (IC= -50 mAdc, IB= -5 mAdc) Base-Emitter Saturation Voltage