HT Semiconductor 2sa1664 free download

File name 2sa1664.pdf

2SA1 664 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES Small Flat Package 2. COLLECTOR High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 100 320 DC current gain hFE(2) VCE=-1V, IC=-700mA 35 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.7 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -0.5 -0.8 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 19 pF Transition frequency fT VCE=-5V,IC=-10mA, 120 MHz CLASSIFICATION OF hFE(1) RANK